View APTGT50X170BTP3_915554.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGT50X170RTP3 APTGT50X170BTP3
Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT(R) Power Module
VCES = 1700V IC = 50A @ Tc = 80C
Application * AC Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Kelvin emitter for easy drive * Low stray inductance * Internal thermistor for temperature monitoring Benefits * Low conduction losses * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
APTGT50X170RTP3: Without Brake (Pin 7 & 14 not connected)
21 20 19 18 17 16 15 14 13 12 11 10
22
9 8
23 7 24
1
2
3
4
5
6
All ratings @ Tj = 25C unless otherwise specified
Symbol VRRM ID IFSM
Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms
TC = 80C Tj = 25C Tj = 150C
Max ratings 1600 80 500 400
Unit V A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-4
APTGT50X170BTP3 - Rev 1,
February, 2004
1. Absolute maximum ratings Diode rectifier Absolute maximum ratings
APTGT50X170RTP3 APTGT50X170BTP3
IGBT & Diode Brake (only for APTGT50X170BTP3) Absolute maximum ratings
Symbol VCES IC ICM VGE PD IF Parameter Collector - Emitter Breakdown Voltage TC = 25C TC = 80C TC = 25C TC = 25C TC = 80C Max ratings 1700 70 50 100 20 310 50 Unit V A V W A
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation DC Forward Current
Absolute maximum ratings
IGBT & Diode Inverter
Symbol VCES IC ICM VGE PD RBSOA IF IFRM
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area DC Forward Current Repetitive Peak Forward Current
TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C TC = 80C tp = 1ms
Max ratings 1200 70 50 100 20 310 100A @ 1700V 50 100
Unit V A V W A
2. Electrical Characteristics Diodes Rectifier Electrical Characteristics
Symbol IR VF RthJC Characteristic Reverse Current Forward Voltage Junction to Case
Test Conditions VR = 1600V Tj = 150C Tj = 150C IF = 50A
Min
Typ 3 1.0
Max
Unit mA V
C/W
0.65
IGBT Brake & Diode (only for APTGT50X170BTP3) Electrical Characteristics
Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Cies Cres VF RthJC Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Reverse Transfer Capacitance Forward Voltage Junction to Case Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 50A Tj = 125C VGE = VCE , IC = 2.5mA VGE = 20V, VCE = 0V VGE = 0V,VCE = 25V f = 1MHz Tj = 25C VGE = 0V IF = 50A Tj = 125C IGBT Diode
Min
Typ 2.0 2.4 5.8 4400 150 1.8 1.9
Max 6 2.4 6.5 600
Unit mA V V nA
February, 2004 2-4 APTGT50X170BTP3 - Rev 1,
5.0
pF 2.2 0.4 0.7 V
C/W
APT website - http://www.advancedpower.com
APTGT50X170RTP3 APTGT50X170BTP3
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff VF Qrr RthJC Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Forward Voltage Reverse Recovery Charge Junction to Case Test Conditions VGE = 0V, IC = 2.5mA VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2.5mA VGE = 20V, VCE = 0V VGE = 0V ;VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 50A RG = 22 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 50A RG = 22 VGE = 0V IF = 50A IF = 50A VR = 900V di/dt=990A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C IGBT Diode Min 1700 Typ Max 5 2.4 6.5 600 Unit V mA V V nA pF
5.0
2.0 2.4 5.8 4400 150 200 90 720 90 220 90 820 110 22 1.8 1.9 19 30
ns
ns mJ 2.2 V C 0.40 0.70
C/W
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K
Min
Typ 5 3375
Max
Unit k K
RT =
R25 exp B25 / 50 11 - T25 T
T: Thermistor temperature RT: Thermistor value at T
APT website - http://www.advancedpower.com
3-4
APTGT50X170BTP3 - Rev 1,
Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight
3. Thermal and package characteristics
Min 2500 -40 -40 -40
Typ
Max 150 125 125 3.3 300
Unit V C N.m g
February, 2004
M5
APTGT50X170RTP3 APTGT50X170BTP3
4. Package outline
PIN 1 PIN 24
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
4-4
APTGT50X170BTP3 - Rev 1,
February, 2004

▲Up To Search▲

Price & Availability of APTGT50X170BTP3

	To Download APTGT50X170BTP3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .